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KSC1008 NPN Epitacial Silicon Transistor
September 2006
KSC1008
NPN Epitacial Silicon Transistor
Features
* Low frequency amplifier medium speed switching. * High Collector-Base Voltage : VCBO=80V. * Collector Current : IC=700mA * Collector Power Dissipation : PC=800mW * Suffix "-C" means Center Collector (1.Emitter 2.Collector 3.Base) * Non suffix "-C" means Side Collector (1.Emitter 2.Base 3.Collector) * Complement to KSA708 KSC1008
1 23
tm
TO-92
: 1. Emitter 2. Base
3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings * T
Symbol
VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature
a
= 25C unless otherwise noted
Parameter
Value
80 60 8 700 800 +150 -55 ~ +150
Units
V V V mA mW C C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics * T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob
a
= 25C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition
IC=100A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz
Min.
80 60 8
Typ.
Max.
Units
V V V
0.1 0.1 40 0.2 0.86 30 50 8 400 0.4 1.1
A A
V V MHz pF
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400
(c)2006 Fairchild Semiconductor Corporation
1
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KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
Package Marking and Ordering Information
Device(note)
KSC1008COBU KSC1008COTA KSC1008CYBU KSC1008CYTA KSC1008GBU KSC1008GTA KSC1008OBU KSC1008OTA KSC1008RBU KSC1008RTA KSC1008YBU KSC1008YTA KSC1008YTF
Device Marking
C1008OC C1008OC C1008YC C1008YC C1008G C1008G C1008O C1008O C1008R C1008R C1008Y C1008Y C1008Y
Package
TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
Packing Method
BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO BULK TAPE & AMMO TAPE & REEL
Qty(pcs)
-2,000 -2,000 -2,000 -2,000 -2,000 -2,000 2,000
Pin Definitions
1.Emitter 2.Collector 3.Base 1.Emitter 2.Collector 3.Base 1.Emitter 2.Collector 3.Base 1.Emitter 2.Collector 3.Base 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector 1.Emitter 2.Base 3.Collector
Note : Affix "-C-" - center collector pin. Affix "-R-, -O-, -Y-, -G-" - hHE classification Suffix "-BU" - Bulk packing, straight lead form.(see package dimensions) Suffix "-TF" - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions) SUffix "-TA" - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)
2 KSC1008 Rev. B
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KSC1008 NPN Epitacial Silicon Transistor
Typical Characteristics
200
240
IB = 1.8mA
180
IB = 1.6mA IB = 1.4mA
220 200
VCE = 2V
IC[mA], COLLECTOR CURRENT
160 140
hFE, DC CURRENT GAIN
180 160 140 120 100 80 60 40
IB = 1.2mA
120
IB = 1.0mA
100
IB = 0.8mA
80 60 40 20 0 0 5 10 15 20 25 30 35 40 45 50
IB = 0.6mA IB = 0.4mA IB = 0.2mA
20 0 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1000
IC=10IB
VCE=2V
1
IC[mA], COLLECTOR CURRENT
100 1000
100
VBE(sat)
0.1
10
VCE(sat)
0.01 1 10
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
f=1MHz IE=0
Cob[pF],CAPACTIANCE
10
1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
3 KSC1008 Rev. B
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KSC1008 NPN Epitacial Silicon Transistor
Package Dimensions TO-92 Straight Lead Form
4.58 -0.15
+0.25
14.47 0.40
0.46 0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60 0.20
3.86MAX
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
Dimensions in Millime
TO-92 0.200 In-Line Spacing Lead Form
Dimensions in Inches[Millimeters]
4 KSC1008 Rev. B
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KSC1008 NPN Epitacial Silicon Transistor KSC1008 NPN Epitacial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
5 KSC1008 Rev. B
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